Kingston DDR3 4Gb 1333MHz ValueRAM CL9 - pcpromaroc
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Kingston DDR3 4Gb 1333MHz ValueRAM CL9 - pcpromaroc

Kingston DDR3 4Gb 1333MHz ValueRAM CL9

la Mémoire RAM Kingston DDR3 4Gb 1333MHz ValueRAM CL9 fabriquer par Kingston

421,00 DH 421 HT
Tous les prix incluent la TVA Livraison à domicile partout au Maroc
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Vous recevrez 4,21 DH en récompense lors de l'achat 1 unités de ce produit. La récompense peut être utilisée pour payer vos prochaines commandes ou convertie en code de réduction.
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FORM FACTOR DIMM 240 ears 
CAPACITY 4GB 
RAM TYPE DDR3 
SPEED 1333 Mhz
Nº MODULES one 
RAM LATENCY CL9 
TENSION 1.5 v
COMPATIBLE MAC
ECC
TECHNICAL DATA:

KVR13N9S8H / 4
4GB 1Rx8 512M x 64-Bit PC3-10600
CL9 240-Pin DIMM

DESCRIPTION

This document describes ValueRAM's 512M x 64-bit (4GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM), 1Rx8 memory module, based on eight 512M x 8-bit DDR3-1333 FBGA components.
The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V.
This 240-pin DIMM uses gold contact fingers.
The electrical and mechanical specifications are as follows:

FEATURES
• JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 667MHz fCK for 1333Mb / sec / pin
• 8 independent internal bank
• Programmable CAS Latency: 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency (CWL) = 7 (DDR3-1333)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85 ° C, 3.9us at 85 ° C <TCASE <95 ° C
• Asynchronous Reset
• PCB: Height 1.18 ”(30mm), single sided component

SPECIFICATIONS
CL (IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active / Refresh 260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 36ns (min.)
Maximum Operating Power 2,100 W *
UL Rating 94 V - 0
Operating Temperature 0o C to
85o Storage Temperature -55o C to + 100o C

* Power will vary depending on the SDRAM used.

A022821
0.50 kg

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